| PART |
Description |
Maker |
| RFP-20N50TPC |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPT2010 |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| NPT2022 NPT2022-15 |
Gallium Nitride 48V, 100W, DC-2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPA1003 NPA1003-15 |
Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
|
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| DS1808 |
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride 双路对数数字电位
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| TCD-2008B50J-G |
Chip Terminations
|
American Accurate Components, Inc.
|
| CHF3020CBF500L |
Power RF Terminations / Resistors
|
Bourns Electronic Solutions
|
